| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 1325 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Lead Style | |
| Military Grade | |
| Mounting Style | |
| Number of Pins | |
| Power Dissipation | |
| Power Dissipation (Max) |
The JANTX2N3506 is an NPN bipolar junction transistor manufactured by SEMICOA. This component is designed for general-purpose applications and features a collector-emitter breakdown voltage of 40V and a continuous collector current rating of 3A. Its maximum power dissipation is 1W.
This transistor is housed in a TO-39 package and utilizes a through-hole mounting style, making it suitable for various circuit designs. The operating temperature range for the JANTX2N3506 is from -65°C to 200°C.
Key electrical characteristics include a minimum hFE of 40 at 1.5A and 2V, and a maximum hFE of 200. The device is specified with a RoHS compliant status and an MSL rating of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V collector to emitter.
TO-39 through-hole mounting.
-65°C to 200°C junction temperature.
3A.
1W (1000mW).
40 to 200 at 1.5A, 2V.