| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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44 pcs
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44 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Automotive Grade | |
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| SVHC Present |
The JANTX2N930 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Motorola Semiconductor. This component is designed to handle high voltage levels within electronic circuits. It is housed in a TO-18-3 package and utilizes a through-hole mounting style.
Key electrical characteristics include a maximum collector-emitter breakdown voltage of 45V and a continuous collector current rating of 0.03A. The DC current gain (hFE) is a minimum of 100 at 10µA and 5V. The transistor has a maximum power dissipation of 300mW. Its operating temperature range spans from -55°C to 200°C.
This BJT is suitable for various switching and amplification applications where its voltage and current specifications are appropriate. The TO-18-3 package is a standard metal can package commonly used in through-hole circuit board assemblies.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the JANTX2N930 is 45V.
The continuous collector current of the JANTX2N930 is 0.03A.
The minimum DC current gain (hFE) for the JANTX2N930 is 100 at 10µA and 5V.
The maximum power dissipation of the JANTX2N930 is 300mW.
The operating temperature range for the JANTX2N930 is -55°C to 200°C.
The JANTX2N930 uses a TO-18-3 package.
The JANTX2N930 is mounted using the through-hole method.