| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,600 pcs
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1600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IST011N06NM5 is an N-channel Power MOSFET belonging to the OptiMOSTM5 series. It is designed with a 60V drain-source voltage (VDS) and a maximum on-resistance (RDS(on)) of 1.1 mΩ at a gate-source voltage of 10V and a drain current of 399A.
This MOSFET is optimized for low-voltage motor drives and battery-powered applications. It features a high continuous drain current capability of 399A at 25°C case temperature and 282A at 100°C case temperature. The device is 100% avalanche tested and rated for a maximum operating temperature of 175°C.
The IST011N06NM5 is supplied in the sTOLL package, which enables automated optical solder inspection. It is fully qualified according to JEDEC for Industrial Applications and is RoHS compliant.
The maximum drain-source voltage (VDS) is 60V.
The continuous drain current (ID) is 399A at TC=25°C with VGS=10V.
The maximum on-resistance (RDS(on)) is 1.1mΩ at VGS=10V and ID=399A.
It is available in a surface-mount sTOLL package.
The maximum operating junction temperature (Tj) is 175°C.
The maximum power dissipation (Ptot) is 313W at TC=25°C.