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FHX45X

The FHX45X is a GaAs HEMT chip from Sumitomo Electric Industries designed for ultra-low noise and high gain amplifiers. It offers a typical noise figure of 0.55dB at 12GHz.

✓ Total Stock: 16,673 pcs

$ Price Range: $0.99

FHX45X Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Risen Electronics ✓ Non-Authorised Inventory information	10,000 pcs On Request	10000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-06-29 21:33:16
Optech Co.,Limited ✓ Non-Authorised Inventory information	6,673 pcs On Request	6673 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

FHX45X Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Sumitomo Electric Industries
Noise Figure	0.55 dB
SVHC Present	Not Present
Storage Temperature	175 °C
Thermal Resistance	155 °C/W

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FHX45X Description

Short technical summary and product information.

The FHX45X is a Super High Electron Mobility Transistor (SuperHEMT) chip from Sumitomo Electric Industries, suitable for general-purpose, ultra-low noise, and high-gain amplifiers operating in the 2-18GHz frequency range. It is well-suited for telecommunication, DBS, TVRO, VSAT, and other low-noise applications.

Key electrical characteristics include a typical saturated drain current of 40mA at VDS=2V, VGS=0V, and a typical transconductance of 65mS at VDS=2V, IDS=10mA. The device exhibits a low noise figure of 0.55dB (Typ.) and high associated gain of 12.0dB (Typ.) at 12GHz. The absolute maximum ratings specify a drain-source voltage of 3.5V and a gate-source voltage of -3.0V, with a total power dissipation of 290mW when mounted on an Al2O3 board.

The chip features a gate length of less than or equal to 0.15µm and a gate width of 280µm, with gold gate metallization for high reliability. The device is intended for use in hermetically sealed environments for optimal performance and reliability. Recommended operating conditions include a drain-source operating voltage not exceeding 2 volts and an operating channel temperature not exceeding 80°C.

FHX45X Quick Information

Product Type: GaAs HEMT Chip

Canonical Name: FHX45X GaAs HEMT Chip

Subcategory: GaAs HEMT

FHX45X Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

FHX45X Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

FHX45X Features

Ultra-low noise figure of 0.55dB at 12GHz.
High associated gain of 12dB at 12GHz.
Designed for 2-18GHz amplifier applications.
Gold gate metallization for high reliability.
Chip package for specialized integration.

FHX45X Applications

Suitable for telecommunication amplifiers.
Ideal for DBS LNB applications.
Used in TVRO systems.
Applicable for VSAT systems.

FHX45X FAQs

7 frequently asked questions generated from this part’s specifications.

What is the typical noise figure at 12 GHz?

0.55 dB typical at VDS = 2 V, IDS = 10 mA, f = 12 GHz.

What is the associated gain at 12 GHz?

12 dB typical at VDS = 2 V, IDS = 10 mA, f = 12 GHz.

What is the package type?

Chip (bare die).

What is the maximum drain-source voltage?

3.5 V (absolute maximum rating).

What is the saturated drain current?

40 mA typical at VDS = 2 V, VGS = 0 V.

What is the maximum power dissipation?

290 mW (mounted on Al2O3 board).

What is the maximum storage temperature?

175 °C.