Mfr Part #:

ATF-10136

Mfr Name: AGL

The ATF-10136 is a low noise Gallium Arsenide FET from Agilent Technologies, suitable for low noise amplifiers operating in the 0.5-12 GHz range. It offers a typical noise figure of 0.5 dB at 4 GHz.

✓ Total Stock: 250 pcs

$ Price Range: $1.17

ATF-10136 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Husky International Electronic ✓ Non-Authorised Inventory information	250 pcs On Request	250 pcs	On Request	1	On Request	On Request	N/A	On Request	On Request

ATF-10136 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	AGL
Approval Agency	0.5-12 GHz
Mounting Type	Surface Mount
Power Dissipation	430 mW
SVHC Present	Not Present
Storage Temperature	175 °C
Tape & Reel	Available

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ATF-10136 Description

Short technical summary and product information.

The ATF-10136 is a high-performance Gallium Arsenide (GaAs) Schottky-barrier-gate field-effect transistor designed for low noise amplifier applications. Operating within the 0.5–12 GHz frequency range, this device is housed in a cost-effective ceramic microstrip package.

Key electrical specifications include a typical noise figure of 0.5 dB at 4 GHz, a typical associated gain of 13.0 dB at 4 GHz, and a typical output power (P1 dB) of 20.0 dBm at 4 GHz. It operates with low bias conditions of VDS = 2 V and IDS = 20 mA.

The ATF-10136 features a nominal 0.3 micron gate length and a total gate periphery of 500 microns. It utilizes proven gold-based metallization systems and nitride passivation for ruggedness and reliability. The device is available in a 36 micro-X package and offers tape-and-reel packaging options.

This GaAs FET is an excellent choice for the first stage of low noise amplifiers where premium noise performance is critical. Its specifications make it suitable for various RF and microwave applications requiring high gain and low noise.

ATF-10136 Quick Information

Product Type: Gallium Arsenide FET

Canonical Name: ATF-10136 Low Noise Gallium Arsenide FET

Subcategory: Gallium Arsenide FET

ATF-10136 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

ATF-10136 Estimated Pricing

Qty	Low	High
1+	$1.17	$1.17

Estimated market price range - modelled values for guidance only, not live distributor offers.

ATF-10136 Features

Low noise figure of 0.5 dB typical at 4 GHz.
High associated gain of 13.0 dB typical at 4 GHz.
Output power of 20.0 dBm typical (P1 dB) at 4 GHz.
Operates in the 0.5–12 GHz frequency range.
Cost-effective ceramic microstrip package.

ATF-10136 Applications

First stage of low noise amplifiers.
RF and microwave applications.
Wideband amplifier designs.
Signal amplification circuits.

ATF-10136 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the package type of the ATF-10136?

The ATF-10136 comes in a 36 micro-X surface mount package.

What is the maximum drain-source voltage?

The maximum drain-source voltage (VDS) is 5 V.

What is the noise figure at 2 GHz?

The typical noise figure is 0.4 dB at 2 GHz (VDS=2V, IDS=25mA).

What is the gain at 4 GHz?

The typical gain is 13.0 dB at 4 GHz (VDS=2V, IDS=25mA).

What is the output power at 1 dB compression?

The typical P1dB is 20 dBm at 4 GHz (VDS=4V, IDS=70mA).

What is the maximum channel temperature?

The maximum channel temperature is 175°C.

What is the frequency range of the ATF-10136?

The frequency range is 0.5 to 12 GHz.