| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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138 pcs
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138 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Tape & Reel |
The Infineon Technologies ISC030N10NM6 is a high-performance N-channel MOSFET designed for demanding applications. It features a maximum drain-source voltage (VDS) of 100V and a very low maximum on-resistance (RDS(on),max) of 3mΩ. This ensures efficient power handling and reduced conduction losses.
With a continuous drain current (ID) rating of up to 179A at 25°C, the ISC030N10NM6 is suitable for high-power switching applications. Its optimized design provides excellent gate charge x RDS(on) product (FOM) and low reverse recovery charge (Qrr), making it ideal for high-frequency switching and synchronous rectification.
The device operates at temperatures up to 175°C and is housed in a PG-TDSON-8 package, designed for surface mounting. It is Pb-free and halogen-free, complying with RoHS standards.
The maximum drain-source voltage is 100V.
The maximum on-resistance is 3mΩ.
The continuous drain current is 179A at 25°C with a gate-source voltage of 10V.
The operating temperature is up to 175°C.
The ISC030N10NM6 is supplied in a PG-TDSON-8 package.
Yes, the ISC030N10NM6 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
