IRFR5305PBF
Infineon
The Infineon IRFR5305PBF is a HEXFET Power MOSFET designed for efficient and reliable applications. It features a -55V breakdown voltage and a continuous drain current of up to 31A.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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18,000 pcs
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18000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2 pcs
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2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Power Dissipation |
The Infineon IRFR2405TRPBF is a high-performance N-Channel Power MOSFET designed for various electronic applications. It features a maximum drain-source voltage (VDSS) of 55V and a continuous drain current (ID) of 56A, making it suitable for power switching and amplification tasks.
This MOSFET exhibits a low on-resistance (RDS(ON)) of 0.0118 Ohms, contributing to efficient power transfer and reduced heat generation. The power dissipation (PD) is rated at 110W, indicating its capability to handle significant power loads.
The IRFR2405TRPBF is housed in a D-Pak (TO-252AA) surface-mount package, facilitating integration into compact circuit designs. Its robust construction and electrical characteristics make it a reliable choice for demanding applications requiring efficient power management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDSS) is 55V.
The continuous drain current (ID) is 56A.
The typical on-resistance (RDS(ON)) is 0.0118 Ohms.
The power dissipation (PD) is 110W.
It is supplied in a D-Pak (TO-252AA) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
