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NCE30H10K The NCE30H10K is a 1 N-Channel MOSFET from Wuxi NCE Power Semiconductor. It offers a 30V drain-source voltage and a continuous drain current of 100A.
Mfr Part #:

NCE30H10K

Available from 2 distributors
Mfr Name: NCE
NCE
The NCE30H10K is a 1 N-Channel MOSFET from Wuxi NCE Power Semiconductor. It offers a 30V drain-source voltage and a continuous drain current of 100A.
✓ Total Stock: 9,050 pcs

NCE30H10K Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
6,750 pcs
On Request
6750 pcs On Request 1 On Request On Request On Request On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
2,300 pcs
On Request
2300 pcs On Request 1 On Request On Request 21+ On Request On Request
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NCE30H10K Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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NCE30H10K Description

Short technical summary and product information.

The NCE30H10K is a 1 N-Channel MOSFET manufactured by Wuxi NCE Power Semiconductor. This component is designed for various electronic applications requiring efficient power switching. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 100A, with a power dissipation (Pd) of 110W.

 

The MOSFET has a gate threshold voltage (Vgs(th)) of 3V at 250uA and a low drain-source on-resistance (Rds(on)) of 5.5mΩ at 10V and 20A, indicating efficient conduction. It is housed in a TO-252-2(DPAK) package, suitable for surface-mount applications.

 

Key electrical characteristics include a typical gate threshold voltage of 3V and a typical on-resistance of 5.5mΩ. The component is specified with RoHS3 compliance. The standard package quantity is 323 units.

NCE30H10K Quick Information

Product Type: MOSFET
Canonical Name: NCE30H10K N-Channel MOSFET
Subcategory: Single N-Channel

NCE30H10K Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NCE30H10K Features

  • 30V Drain Source Voltage (Vdss)
  • 100A Continuous Drain Current (Id)
  • 110W Power Dissipation (Pd)
  • 5.5mΩ On-Resistance (Rds(on))
  • TO-252-2(DPAK) Package

NCE30H10K Applications

  • Used in DC-DC converter circuits
  • Suitable for motor drive applications
  • Ideal for power management systems
  • Applied in battery protection modules
  • Used in load switching circuits

NCE30H10K FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the NCE30H10K?

The drain-source voltage (Vdss) is 30V.

What is the continuous drain current for the NCE30H10K?

The continuous drain current (Id) is 100A.

What is the power dissipation of the NCE30H10K MOSFET?

The power dissipation (Pd) is 110W.

What is the gate threshold voltage for the NCE30H10K?

The gate threshold voltage (Vgs(th)) is 3V at 250uA.

What is the on-resistance of the NCE30H10K?

The drain-source on-resistance (Rds(on)) is 5.5mΩ at 10V and 20A.

What type of MOSFET is the NCE30H10K?

The NCE30H10K is a 1 N-Channel MOSFET.

What is the package type for the NCE30H10K?

The package type is TO-252-2(DPAK).

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