| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
210,000 pcs
|
210000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
36 pcs
|
36 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRFR5305PBF is a fifth-generation HEXFET Power MOSFET utilizing advanced processing techniques for extremely low on-resistance per silicon area. This device offers fast switching speeds and a ruggedized design, making it suitable for a wide variety of applications.
Key electrical specifications include a Drain-to-Source Breakdown Voltage of -55V and a Continuous Drain Current of -31A at 25°C (TC) with a Gate-to-Source Voltage of -10V. The Static Drain-to-Source On-Resistance is a low 0.065 Ohms under the same test conditions. The Gate Threshold Voltage ranges from -2.0V to -4.0V.
This MOSFET is housed in a D-Pak package designed for surface mounting. The operating junction and storage temperature range is from -55°C to +175°C. Thermal resistance from junction-to-case is 1.4°C/W, and junction-to-ambient is 50°C/W for PCB mount applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is -31A at 25°C with a VGS of -10V.
The maximum gate-to-source voltage is ±20V.
The operating junction temperature range is -55°C to +175°C.
The static drain-to-source on-resistance is 0.065 Ohms when VGS is -10V and ID is -16A.
The IRFR5305PBF is in a D-Pak package designed for surface mounting.