TPCA8039-H
Toshiba
The Toshiba TPCA8039-H is a Silicon N-Channel MOSFET. It features a 30V breakdown voltage and a maximum operating temperature of 150°C.
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227 pcs
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227 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Renesas IRFD1Z0 is an N-Channel enhancement mode silicon gate power field-effect transistor. It is designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors that require high speed and low gate drive power. These transistors can be operated directly from integrated circuits.
Key electrical specifications include a minimum drain-source resistance of 2.4Ω and a minimum breakdown voltage of 100V. The device has a maximum power dissipation of 1W and a typical power dissipation of 1.3W. The maximum operating temperature is rated at 150°C.
This MOSFET is suitable for various power switching applications where efficiency and speed are critical. Its design allows for direct operation from integrated circuits, simplifying system design. The device features 3 terminals and is intended for applications requiring robust performance in demanding environments.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage is 100V.
The maximum operating temperature is 150°C.
The minimum drain-source resistance is 2.4Ω.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.