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TPCT4204 The Toshiba TPCT4204 is a Silicon N-Channel MOS Type Field Effect Transistor. It features a breakdown voltage of 30V and a maximum power dissipation of 1.7W.
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TPCT4204

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCT4204 is a Silicon N-Channel MOS Type Field Effect Transistor. It features a breakdown voltage of 30V and a maximum power dissipation of 1.7W.
✓ Total Stock: 34,256 pcs

TPCT4204 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
34,256 pcs
On Request
34256 pcs On Request 1 On Request On Request 10+PB On Request On Request
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TPCT4204 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Operating Temperature
Power Dissipation
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TPCT4204 Description

Short technical summary and product information.

The Toshiba TPCT4204 is a Field Effect Transistor of the Silicon N-Channel MOS Type. This component is manufactured by Toshiba and offers a breakdown voltage of up to 30V.

 

Key electrical characteristics include a minimum drain-source resistance of 44mΩ and a maximum power dissipation of 1.7W. The device can operate at temperatures up to 150°C.

 

With 4 terminals, the TPCT4204 is suitable for various electronic applications requiring a reliable N-Channel MOSFET. Its specifications make it a versatile component for circuit design and integration.

TPCT4204 Quick Information

Product Type: Field Effect Transistor
Canonical Name: Toshiba TPCT4204 Field Effect Transistor Silicon N Channel MOS Type
Subcategory: N-Channel

TPCT4204 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCT4204 Features

  • Toshiba N-Channel MOS Type Field Effect Transistor.
  • 30V maximum breakdown voltage.
  • 44mΩ minimum drain-source resistance.
  • 1.7W maximum power dissipation.
  • Operates up to 150°C.

TPCT4204 Applications

  • Suitable for power switching circuits.
  • Used in amplification applications.
  • General purpose electronic designs.
  • Component for integrated circuits.

TPCT4204 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the TPCT4204?

The maximum breakdown voltage for the TPCT4204 is 30V.

What is the minimum drain-source resistance?

The minimum drain-source resistance is 44mΩ.

What is the maximum power dissipation?

The maximum power dissipation is 1.7W.

What is the maximum operating temperature?

The maximum operating temperature is 150°C.

How many terminals does the TPCT4204 have?

The TPCT4204 has 4 terminals.

TPCT4204 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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TPCT4203
TPCT4203
Toshiba
The Toshiba TPCT4203 is a Silicon N Channel MOS Type Field Effect Transistor. It offers a breakdown voltage of 30V and a maximum operating temperature of 150°C.
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