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TPCT4203 The Toshiba TPCT4203 is a Silicon N Channel MOS Type Field Effect Transistor. It offers a breakdown voltage of 30V and a maximum operating temperature of 150°C.
Mfr Part #:

TPCT4203

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba TPCT4203 is a Silicon N Channel MOS Type Field Effect Transistor. It offers a breakdown voltage of 30V and a maximum operating temperature of 150°C.
✓ Total Stock: 5,600 pcs

TPCT4203 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,600 pcs
On Request
5600 pcs On Request 1 On Request On Request 10+ On Request On Request
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TPCT4203 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Operating Temperature
Power Dissipation
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TPCT4203 Description

Short technical summary and product information.

The Toshiba TPCT4203 is a Silicon N Channel MOS Type Field Effect Transistor manufactured by Toshiba. This component features a drain-source resistance of 44mΩ minimum and a breakdown voltage of 30V maximum.

 

With a maximum power dissipation of 1.7W, the TPCT4203 is designed for operation up to a maximum temperature of 150°C. It has 4 terminals.

 

This transistor is suitable for various electronic applications requiring efficient switching and amplification. Its specifications make it a reliable choice for designs needing specific electrical characteristics within its operating limits.

TPCT4203 Quick Information

Product Type: Field Effect Transistor
Canonical Name: Toshiba TPCT4203 Field Effect Transistor
Subcategory: MOSFET

TPCT4203 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

TPCT4203 Features

  • Silicon N Channel MOS Type transistor.
  • 30V maximum breakdown voltage.
  • 1.7W maximum power dissipation.
  • 150°C maximum operating temperature.
  • 4 terminals.

TPCT4203 Applications

  • Suitable for switching applications.
  • Used in amplification circuits.
  • General purpose electronic designs.

TPCT4203 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum breakdown voltage of the TPCT4203?

The maximum breakdown voltage is 30V.

What is the minimum drain-source resistance?

The minimum drain-source resistance is 44mΩ.

What is the power dissipation rating?

Maximum power dissipation is 1.7W.

What is the maximum operating temperature?

The maximum operating temperature is 150°C.

How many terminals does the package have?

The component has 4 terminals.

TPCT4203 Alternate Parts

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TPCT4204
TPCT4204
Toshiba
The Toshiba TPCT4204 is a Silicon N-Channel MOS Type Field Effect Transistor. It features a breakdown voltage of 30V and a maximum power dissipation of 1.7W.
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