| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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28,985 pcs
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28985 pcs | On Request | 1 | On Request | On Request | 07+ROHS | On Request | On Request | |
|
2,600 pcs
|
2600 pcs | On Request | 1 | On Request | On Request | 0846+ | On Request | On Request |
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The Toshiba TPC8025 is a Field Effect Transistor designed for various electronic applications. It offers a minimum breakdown voltage of 30V and a maximum power dissipation of 1.9W. The device has a minimum drain-source resistance of 14.5mΩ.
This transistor operates at a maximum temperature of 150°C. It has 8 terminals, indicating a specific package type suitable for surface mounting or through-hole applications, depending on the exact variant. The TPC8025 is manufactured by Toshiba, a well-known semiconductor provider.
Key electrical characteristics include its low drain-source resistance, making it efficient for switching and amplification tasks. The specified breakdown voltage ensures reliable operation within its voltage limits. The maximum operating temperature rating is important for thermal management in circuit design.
This component is part of the broader category of discrete semiconductor products, specifically single transistors. Its specifications suggest suitability for power management, signal switching, and amplification circuits where performance and reliability are critical.
The minimum breakdown voltage is 30V.
The minimum drain-source resistance is 14.5 mOhm.
The maximum power dissipation is 1.9W.
The maximum operating temperature is 150°C.
It has 8 terminals.
It is a single MOSFET.