IRFC7314B

N-Channel Enhancement Mode MOSFET. 20V drain-source voltage, 6.9A continuous drain current, 20mΩ low on-resistance.

The Vishay Dale SIA400EDJ-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a low on-resistance of 19mOhm at 11A. It is housed in a compact PowerPAK SC-70-6 package.

The Toshiba SSM3K324R,LF is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a 4A continuous drain current. It is supplied in a SOT-23F package.

N-Channel enhancement mode MOSFET with 20V drain-source voltage and 2.8A continuous drain current. Features low on-resistance of 90mΩ at 4.5V gate drive.