| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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904,000 pcs
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904000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba SSM3K324R,LF is a single N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 30V and can handle a continuous drain current of 4A.
Key electrical characteristics include a maximum Rds On of 55mOhm at 4A and 4.5V, an input capacitance of 190pF at 30V, and a gate-source threshold voltage ranging from 0.4V to 1V. The MOSFET operates with a maximum gate-source voltage of ±12V and has a typical turn-on delay of 9ns and turn-off delay of 9.5ns.
This device is built using Si technology and belongs to the U-MOSVI series. It is specified for a maximum operating temperature of 150°C and has a power dissipation of 1W at ambient temperature. The MOSFET is configured as a single channel in enhancement mode.
The SSM3K324R,LF is packaged in a SOT-23-3 Flat Leads (SOT-23F) surface mount package, supplied on a reel with a factory pack quantity of 3000 units. Its dimensions are 2.9mm in length, 1.3mm in width, and 0.9mm in height.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.56 | $2.56 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The continuous drain current is 4A.
The drain-source breakdown voltage is 30V.
The maximum Rds On is 55mOhm at 4A drain current and 4.5V gate-source voltage.
The maximum operating temperature is 150°C.
The SSM3K324R,LF is supplied in a SOT-23-3 Flat Leads (SOT-23F) package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.