| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,777,020 pcs
|
1777020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
8,981 pcs
|
8981 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,210 pcs
|
1210 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id | |
| Weight |
The DMN2020LSN-7 is an N-Channel Enhancement Mode MOSFET from Diodes Incorporated designed for low power switching applications. It features a drain-source voltage of 20V and continuous drain current of 6.9A at 25°C. The device offers low on-resistance of 20mΩ at VGS=4.5V, ensuring high efficiency. It has fast switching speed and low input capacitance of 1149pF. The MOSFET is ESD protected up to 2kV and qualified to AEC-Q101 standards for automotive reliability. It is housed in a surface-mount SC-59 (TO-236-3) package with matte tin terminals. The device is RoHS compliant and lead-free by design, with UL 94V-0 flammability rating. It is suitable for load switching, DC-DC converters, and other general-purpose applications.
20V.
SC-59 (TO-236-3, SOT-23-3).
-55°C to 150°C.
Yes, it is RoHS compliant and lead-free by design.
6.9A at 25°C, 4.5A at 85°C.
Minimum 0.5V, typical 1.0V, maximum 1.5V at 250µA.
Yes, it is qualified to AEC-Q101 standards.