SIA400EDJ-T1-GE3 The Vishay Dale SIA400EDJ-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a low on-resistance of 19mOhm at 11A. It is housed in a compact PowerPAK SC-70-6 package.
Mfr Part #:

SIA400EDJ-T1-GE3

Available from 2 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SIA400EDJ-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and a low on-resistance of 19mOhm at 11A. It is housed in a compact PowerPAK SC-70-6 package.
✓ Total Stock: 1,004,020 pcs
$ Price Range: $0.99

SIA400EDJ-T1-GE3 Available from 2 distributors

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1,000,000 pcs
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4,020 pcs
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SIA400EDJ-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SIA400EDJ-T1-GE3 Description

Short technical summary and product information.

The Vishay Dale SiA400EDJ is an N-Channel Power MOSFET designed for applications requiring efficient switching and low on-resistance. It features a 30V drain-source voltage (Vds) and a maximum on-resistance of 19mOhm at a gate-source voltage (Vgs) of 4.5V and a drain current (Id) of 11A. Another test condition shows 25mOhm at 12A and 2.5V Vgs.

 

This MOSFET offers a continuous drain current of 12A at 25°C case temperature and 11A at 25°C ambient temperature. It has a typical gate charge (Qg) of 36nC at 10V Vgs and an input capacitance (Ciss) of 1265pF at 15V Vds. The device operates within a temperature range of -55°C to 150°C.

 

Packaged in a thermally enhanced PowerPAK SC-70-6, this surface-mount MOSFET is suitable for space-constrained designs. Its applications include load switches, overvoltage protection switches, boost converters, and DC/DC converters. The device is rated for 30V and supports gate-source voltages up to ±12V.

SIA400EDJ-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Siliconix SiA400EDJ N-Channel 30V Power MOSFET
Subcategory: N-Channel

SIA400EDJ-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead (Pb)-free

SIA400EDJ-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SIA400EDJ-T1-GE3 Features

  • 30V drain-source voltage rating.
  • Low 19mOhm on-resistance.
  • 12A continuous drain current.
  • Compact PowerPAK SC-70-6 package.
  • N-Channel MOSFET technology.

SIA400EDJ-T1-GE3 Applications

  • Ideal for load switch applications.
  • Suitable for OVP switch circuits.
  • Used in boost converter designs.
  • Effective in DC/DC converters.

SIA400EDJ-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of this MOSFET?

The maximum drain-source voltage (Vdss) is 30V.

What is the continuous drain current rating?

The continuous drain current (Id) is 12A at Tc=25°C and 11A at TA=25°C.

What package is the SIA400EDJ-T1-GE3 available in?

It is available in a PowerPAK SC-70-6 surface mount package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What is the typical gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 1.5V at 250µA drain current.

What is the on-resistance at 4.5V gate drive?

The maximum on-resistance is 19mOhm at 11A drain current and 4.5V gate-source voltage.

Is the device avalanche rated?

Yes, it has a maximum avalanche current (IAS) of 15A and single pulse avalanche energy (EAS) of 11.25mJ.

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