| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
786 pcs
|
786 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The IRFBE30PBF is a third-generation N-Channel Power MOSFET manufactured by Infineon. It is designed to provide a combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness.
Key electrical specifications include a Drain-Source Breakdown Voltage (Vds) of 800V and a Continuous Drain Current (Id) of 4.1A at 25°C. The MOSFET also features a low on-resistance of 3Ω at Vgs = 10V and a maximum power dissipation of 125W at 25°C.
This device is housed in a universally preferred TO-220AB package, making it suitable for commercial-industrial applications with power dissipation levels up to approximately 50W. The low thermal resistance and package cost of the TO-220AB contribute to its wide acceptance in the industry. It is also RoHS compliant.
The IRFBE30PBF is suitable for various power switching applications where fast switching and high voltage capability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Breakdown Voltage (Vds) is 800V.
The continuous drain current (Id) is 4.1A at 25°C.
The on-resistance (RDS(on)) is 3Ω at Vgs = 10V.
The operating junction and storage temperature range is -55°C to +150°C.
The IRFBE30PBF is available in the TO-220AB package.
