IRFP250NPBF

The Infineon IRFP250NPBF is an N-channel Power MOSFET from the Fifth Generation HEXFET series. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area, combined with fast switching speeds and a ruggedized design.

Key electrical specifications include a Drain-to-Source Breakdown Voltage (V(BR)DSS) of 200V and a maximum Static Drain-to-Source On-Resistance (RDS(on)) of 0.075Ω at a gate-to-source voltage of 10V and a drain current of 18A. The continuous drain current (ID) is rated at 30A at 25°C case temperature and 21A at 100°C. It also features a high continuous drain current capability (IDM) of 120A and a maximum power dissipation (PD) of 214W at 25°C.

This MOSFET operates within a junction temperature range of -55°C to +175°C. It is housed in a TO-247AC package, which is suitable for commercial-industrial applications requiring higher power levels than TO-220 devices. The TO-247AC package offers an isolated mounting hole.

Features such as dynamic dv/dt rating, 175°C operating temperature, fast switching, and full avalanche rating make this device suitable for a wide variety of applications requiring efficient and reliable power switching.