| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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452,000 pcs
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452000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Junction Temperature | |
| Lead Spacing | |
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| SVHC Present | |
| Storage Temperature |
The BD139-16 is an NPN power transistor manufactured by ST, designed for applications requiring moderate power handling. It is housed in a TO-126 (SOT32) plastic package, suitable for through-hole mounting.
Key electrical characteristics include a maximum collector-emitter voltage (VCEO) of 80V and a continuous collector current (IC) of 1.5A. The device also offers a peak collector current (ICM) of 2A and a peak base current (IBM) of 1A. Its DC current gain (hFE) ranges from 63 to 250 at an IC of 150mA and VCE of 2V, with a typical transition frequency (fT) of 190MHz at 50mA and 5V.
Thermal performance is supported by a junction-to-mounting base thermal resistance of 10 K/W, allowing for efficient heat dissipation. The transistor is rated for a total power dissipation of 8W at a mounting base temperature of 70°C. Operating and storage temperatures range from -65°C to +150°C.
This transistor is commonly used in driver stages for hi-fi amplifiers and television circuits, leveraging its combination of current capability and voltage rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 80V.
The maximum continuous collector current (IC) is 1.5A, with a peak current (ICM) of 2A.
The total power dissipation (Ptot) is 8W at a mounting base temperature of 70°C.
The BD139-16 is available in a TO-126 (SOT32) through-hole package.
The operating ambient temperature range is -65°C to +150°C.
The DC current gain (hFE) is 100 to 250 at IC=150mA and VCE=2V.