IRF8736PBF
IOR
The IRF8736PBF is a Power MOSFET from International Rectifier. It offers a 30V drain-source voltage and low on-resistance.
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9,695 pcs
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9695 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRF8736PBF is a HEXFET power MOSFET designed for applications such as synchronous rectification in isolated DC-DC converters and processor power in notebooks. It offers a 30V drain-to-source breakdown voltage and a low static drain-to-source on-resistance, with a maximum of 4.8mΩ at a gate-source voltage of 10V and a drain current of 18A. The continuous drain current is rated at 18A at 25°C ambient temperature and 14.4A at 70°C.
This MOSFET has a typical gate threshold voltage of 1.8V and a total gate charge of 17nC. It is characterized by its low gate charge and fully characterized avalanche voltage and current capabilities. The device is tested 100% for RG and is lead-free.
The IRF8736PBF comes in a standard SO-8 package. Its thermal resistance from junction to ambient is 50°C/W, and from junction to drain lead is 20°C/W. The operating junction and storage temperature range is -55°C to +150°C.
Key electrical parameters include a breakdown voltage temperature coefficient of 0.022V/°C and a gate threshold voltage temperature coefficient of -6.1mV/°C. It also features a continuous source current of 3.1A for the body diode and a pulsed source current of 144A.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 30V.
The maximum static drain-to-source on-resistance is 4.8mΩ at a gate-source voltage of 10V and a drain current of 18A.
The continuous drain current rating is 18A at 25°C ambient temperature.
The typical total gate charge is 17nC.
The IRF8736PBF is supplied in an SO-8 package.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, the IRF8736PBF is lead-free.