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751 pcs
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751 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Vishay Siliconix IRF8736PBF is a HEXFET Power MOSFET designed for high-performance applications. It features a breakdown voltage of 30V and a low static drain-to-source on-resistance of up to 4.8mΩ at a gate-to-source voltage of 10V. The total gate charge is typically 17nC.
This MOSFET is characterized by its very low RDS(on) at 4.5V VGS and low gate charge, making it suitable for applications requiring efficient power switching. It is fully characterized for avalanche voltage and current, and 100% tested for RG.
The device is housed in a standard SO-8 package. Its lead-free construction aligns with environmental standards. Key electrical parameters include a typical gate threshold voltage of 1.8V and a continuous drain current rating of 18A at 25°C ambient temperature.
Applications include synchronous rectification for isolated DC-DC converters in networking systems and synchronous MOSFET for notebook processor power. The device offers robust performance with a maximum operating junction temperature of 150°C.
The minimum drain-to-source breakdown voltage is 30V at VGS = 0V and ID = 250µA.
The continuous drain current is 18A at TA = 25°C with VGS = 10V, and 14.4A at TA = 70°C.
The maximum static drain-to-source on-resistance is 4.8mΩ at ID = 18A and VGS = 10V.
The IRF8736PBF is available in an SO-8 package.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, the IRF8736PBF is RoHS3 compliant and lead-free.