| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,134 pcs
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12134 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request | |
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7,500 pcs
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7500 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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The IRF8736PBF is a HEXFET Power MOSFET designed for applications such as synchronous rectification in DC-DC converters and notebook processor power. It features a low RDS(on) of 4.8mΩ at 10V VGS and a low gate charge of 17nC typical.
Key electrical characteristics include a 30V drain-to-source breakdown voltage and a continuous drain current of 14.4A at 25°C ambient temperature. The device also offers a low gate threshold voltage of 1.8V typical and a gate resistance of 1.3Ω typical.
Packaged in an SO-8 surface mount package, the IRF8736PBF is suitable for various power management designs. Its thermal resistance is rated at 50°C/W junction-to-ambient.
The MOSFET is characterized for avalanche voltage and current, with a single pulse avalanche energy of 126mJ maximum and an avalanche current of 14.4A maximum. It also includes an integrated body diode with a forward voltage of 1.0V maximum and a reverse recovery time of 24ns maximum.
The maximum drain-to-source voltage is 30V.
The typical gate threshold voltage is 1.8V.
The maximum static drain-to-source on-resistance at 10V VGS is 4.8mΩ.
The typical total gate charge is 17nC.
The IRF8736PBF is available in an SO-8 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.