| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,626 pcs
|
3626 pcs | On Request | 1 | On Request | On Request | 2011 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Lead Style | |
| Reverse Recovery Time | |
| SVHC Present | |
| Tape & Reel |
The NXP Semiconductors BSS84W is a P-Channel Power MOSFET designed for applications requiring efficient switching and low conductive losses. It features a drain-source voltage (VDS) of -60V and a low gate charge for fast power switching. The device offers a maximum on-state resistance (RDS(on)) of 8Ω at VGS = -10V and 10Ω at VGS = -4.5V, making it suitable for low side load switching and level shift circuits.
With a continuous drain current (ID) of -140mA at 25°C, the BSS84W is housed in a compact SOT-323 package, ideal for space-constrained designs. Its operating junction and storage temperature range is -55°C to +150°C. The MOSFET also includes a Source-Drain Diode with a forward voltage of -1.2V.
Key electrical specifications include a typical gate threshold voltage (VGS(TH)) of -1.5V, input capacitance (Ciss) of 37pF, and output capacitance (Coss) of 15pF. Switching characteristics such as turn-on delay time (td(on)) are typically 10ns, and turn-off delay time (td(off)) are typically 21ns.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -60V.
The package is SOT-323.
The operating junction and storage temperature range is -55°C to +150°C.
The typical gate threshold voltage is -1.5V, with a maximum of -2.0V.
The typical on-resistance is 3.6Ω at VGS=-10V, ID=-140mA.
The maximum continuous drain current is -140mA at TA=25°C.
Typical turn-on delay time is 10ns, and turn-off delay time is 21ns.