| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,200 pcs
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1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IR2130S is a high voltage, high speed power MOSFET and IGBT driver IC manufactured by Infineon Technologies. It integrates three independent high and low side referenced output channels, designed for bootstrap operation and fully operational up to 600V.
Key electrical specifications include a gate drive supply range of 10 to 20V, logic input compatibility down to 2.5V, and an output current capability of ±200 mA / ±420 mA. The device offers features such as undervoltage lockout for all channels and over-current shutdown that turns off all six drivers. Propagation delays are matched for high-frequency applications, with typical turn-on/off times of 675 & 425 ns and a typical deadtime of 2.5 µs.
This driver IC is suitable for driving N-channel power MOSFETs or IGBTs in high-side configurations. It is available in a 28-Lead SOIC surface mount package, designed for robust performance in demanding applications.
The IR2130s is available in a 28-Lead SOIC package.
The maximum high side floating supply voltage is 625V.
The gate drive supply range is 10 to 20V.
The output current is ±200 mA source and ±420 mA sink.
Typical turn-on delay is 675 ns and turn-off delay is 425 ns.
The typical deadtime is 2.5 µs.
The device is compatible with 2.5V logic.