| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,236 pcs
|
1236 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
314 pcs
|
314 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
117 pcs
|
117 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| SVHC Present |
The Infineon IPP60R190C6 is a high-performance N-channel Power MOSFET belonging to the CoolMOS C6 technology. Designed for high voltage applications, this transistor features a maximum drain-source voltage (Vds) of 650V and a maximum on-resistance (Rds(on)) of 0.19 Ohms. Its typical gate charge (Qg) is 63 nC, contributing to its fast switching capabilities.
This MOSFET is engineered for efficiency, offering extremely low switching and conduction losses. It is suitable for various power management applications, including PFC stages, hard switching PWM stages, and resonant switching PWM stages. Common applications include PC power supplies, adapters, LCD and PDP televisions, lighting systems, servers, telecom equipment, and UPS.
The IPP60R190C6 is supplied in a PG-TO220 package, designed for through-hole mounting. It is JEDEC qualified, Pb-free plated, and halogen-free, aligning with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
0.19Ω maximum.
63nC.
59A.
PG-TO220.
500 A/µs.
Yes, it has Pb-free plating.
