IPP60R099C7 IPP60R099C7 is an N-Channel CoolMOS™ power MOSFET from Infineon with a maximum breakdown voltage of 950V.
Mfr Part #:

IPP60R099C7

Available from 1 distributors
Mfr Name: Infineon
Infineon
IPP60R099C7 is an N-Channel CoolMOS™ power MOSFET from Infineon with a maximum breakdown voltage of 950V.
✓ Total Stock: 2,220 pcs
$ Price Range: $2.40

IPP60R099C7 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,220 pcs
2220 pcs On Request 1 On Request On Request 17+ On Request On Request

IPP60R099C7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPP60R099C7 Description

Short technical summary and product information.

The IPP60R099C7 is an N-Channel enhancement-mode power MOSFET built on Infineon's CoolMOS™ technology platform. It features a maximum breakdown voltage of 950V, making it suitable for high-voltage switching applications.

 

This device is designed for efficient power conversion in applications such as switched-mode power supplies, lighting, and industrial power systems. The CoolMOS™ technology provides low on-state resistance and fast switching performance.

 

The part is RoHS3 compliant and REACH unaffected, meeting current environmental regulatory requirements.

IPP60R099C7 Quick Information

Product Type: Power MOSFET
Series: CoolMOS C7
Canonical Name: IPP60R099C7 N-Channel CoolMOS™ Power MOSFET
Subcategory: N-Channel MOSFET

IPP60R099C7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPP60R099C7 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP60R099C7 Features

  • N-Channel CoolMOS™ power MOSFET technology.
  • Maximum breakdown voltage of 950V.
  • RoHS3 compliant and REACH unaffected.
  • Designed for high-voltage switching applications.

IPP60R099C7 Applications

  • Used in high-voltage power supply circuits.
  • Ideal for switched-mode power converters.
  • Suitable for industrial power systems.
  • Applicable in lighting ballast designs.

IPP60R099C7 FAQs

3 frequently asked questions generated from this part’s specifications.
What is the maximum breakdown voltage of the IPP60R099C7?

The maximum breakdown voltage is 950V.

What type of transistor is the IPP60R099C7?

It is an N-Channel MOSFET.

What technology is used in the IPP60R099C7?

It uses CoolMOS™ technology.

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