| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,220 pcs
|
2220 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Technology | |
| Transistor Type |
The IPP60R099C7 is an N-Channel enhancement-mode power MOSFET built on Infineon's CoolMOS™ technology platform. It features a maximum breakdown voltage of 950V, making it suitable for high-voltage switching applications.
This device is designed for efficient power conversion in applications such as switched-mode power supplies, lighting, and industrial power systems. The CoolMOS™ technology provides low on-state resistance and fast switching performance.
The part is RoHS3 compliant and REACH unaffected, meeting current environmental regulatory requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum breakdown voltage is 950V.
It is an N-Channel MOSFET.
It uses CoolMOS™ technology.