| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,260 pcs
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1260 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPW65R041CFDFKSA2 is an N-channel power MOSFET designed for high-performance applications. It belongs to Infineon's CoolMOS™ technology family, known for its efficiency and reliability.
Key electrical characteristics include a maximum breakdown voltage of 650V and a typical drain-source on-resistance (Rds On) of 0.041 Ohms at 16A and 10V. The continuous drain current at 25°C is 16A. It also features a typical gate threshold voltage of 2.8V, a gate charge of 35nC, and input/output/reverse transfer capacitances of 1000pF, 130pF, and 15pF respectively.
This MOSFET is housed in a PG-TO247-3 package and is designed for through-hole mounting. Its specifications make it suitable for various power conversion and switching applications where high voltage and low on-resistance are critical.
Compliance information indicates RoHS3 compliance, MSL 1, and REACH unaffected status, though these are unverified.
| Qty | Low | High |
|---|---|---|
| 1+ | $13.55 | $13.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage is 650V.
The typical Rds On is 0.041 Ohms at 16A and 10V.
The continuous drain current at 25°C is 16A.
The typical gate threshold voltage is 2.8V.
It is in the PG-TO247-3 package.
Yes, it is RoHS3 Compliant.
The MSL is 1 Unlimited.