IPP65R190CFD
Infineon
The Infineon IPP65R190CFD is an N-channel power MOSFET utilizing CoolMOS technology. It features a voltage rating range of 500 V to 950 V and comes in a TO-220-3 package.
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2,020 pcs
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2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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616 pcs
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616 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPB60R099CPATMA1 is an N-channel power MOSFET utilizing Infineon's CoolMOS™ technology. This component is designed for power applications and features a breakdown voltage range extending up to 950V.
As a power MOSFET, it is suitable for various switching and power management tasks. The N-channel configuration is standard for many power electronics designs. The CoolMOS™ technology typically offers advantages in efficiency and performance for high-voltage applications.
Further specifications such as drain-source voltage, gate-source voltage, on-resistance, continuous drain current, input capacitance, gate charge, and maximum power dissipation would be detailed in the product's datasheet. Information regarding package type, mounting type, and operating temperature is also typically found in the datasheet, which is essential for proper design integration.
| Qty | Low | High |
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| 1+ | $8.14 | $8.14 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum breakdown voltage is 950V.
It uses CoolMOS™ technology.
It is an N-channel power MOSFET.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
