| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,340 pcs
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1340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPP50R280CE is an N-channel power MOSFET designed for high-performance applications. It employs Infineon's advanced CoolMOS™ technology, enabling efficient power conversion.
This MOSFET features a breakdown voltage range from 500V to 950V, making it suitable for various high-voltage applications. The N-channel configuration and power MOSFET type indicate its role in switching and amplification circuits.
The component is housed in a TO-220-3 package, a common through-hole form factor that facilitates mounting and heat dissipation. Its design is optimized for power management tasks where reliability and efficiency are critical.
Key specifications include its CoolMOS™ technology and N-channel configuration, providing a robust solution for demanding power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The breakdown voltage range for the IPP50R280CE MOSFET is 500 V to 950 V.
The Infineon IPP50R280CE MOSFET uses CoolMOS™ technology.
The IPP50R280CE MOSFET has an N-channel.
The package type for the IPP50R280CE MOSFET is TO-220-3.