| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,098 pcs
|
4098 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,696 pcs
|
1696 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Operating Temperature |
The IPD50R520CP from Infineon is a single MOSFET designed for various electronic applications. It features a minimum breakdown voltage of 500V and a maximum continuous drain current of 7.1A. The device also offers an avalanche energy rating of 166 mJ.
This MOSFET operates within a temperature range of up to 175°C, making it suitable for demanding environments. It is packaged in a TO-252-3 (R-PSSO-G2) surface-mount package, which is common for power applications requiring efficient heat dissipation.
Key electrical characteristics include a drain-source on-resistance specification, though the exact value is not detailed here. The component is RoHS3 compliant, indicating adherence to environmental regulations regarding hazardous substances.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum breakdown voltage for the IPD50R520CP is 500 V.
The maximum continuous drain current (ID) for the IPD50R520CP is 7.1 A.
The operating temperature for the IPD50R520CP is up to 175 °C.
The IPD50R520CP is supplied in a TO-252-3 package.
The RoHS status is RoHS3 Compliant.
