| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
38,333 pcs
|
38333 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,543 pcs
|
1543 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
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| SVHC Present | |
| Tape & Reel |
The Infineon BSC022N04LS6 is a high-performance N-channel Power MOSFET from the OptiMOSTM 6 family. It is specifically optimized for synchronous applications, offering very low on-resistance (RDS(on),max 2.2 mΩ) and superior thermal resistance.
This MOSFET features a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of up to 139A at 25°C with a VGS of 10V. It is 100% avalanche tested and rated for operation up to 175°C.
The BSC022N04LS6 is supplied in a TDSON-8 package, suitable for surface mount applications. It is Pb-free and Halogen-free, compliant with RoHS and IEC61249-2-21 standards, making it suitable for industrial applications.
Key electrical parameters include an output charge (Qoss) of 31 nC and gate charge (QG) values of 28 nC (0V to 10V) and 13.5 nC (0V to 4.5V). The part is qualified for industrial applications according to JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) for the BSC022N04LS6 is 40V.
The maximum on-resistance (RDS(on)) is 2.2 mΩ when the gate-source voltage is 10V and the drain current is 50A.
The continuous drain current (ID) is rated up to 139A at 25°C with a VGS of 10V.
The BSC022N04LS6 is supplied in a TDSON-8 package.
The BSC022N04LS6 is rated for operation up to 175°C.
Yes, the BSC022N04LS6 is RoHS3 Compliant.
Yes, the BSC022N04LS6 is Halogen-free.