| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
57,200 pcs
|
57200 pcs | On Request | 1 | On Request | On Request | 1617+ | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
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| SVHC Present |
The Infineon Technologies BSC011N03LS is a high-performance N-channel Power MOSFET from the OptiMOS™ family, designed for demanding applications such as buck converters. It features a maximum drain-source breakdown voltage of 30V and a very low on-resistance of 1.1mΩ at a gate-source voltage of 4.5V.
This MOSFET is fully qualified according to JEDEC standards for industrial applications and boasts a high continuous drain current capability of 240A at 25°C. It is optimized for superior thermal resistance and operates reliably at temperatures up to 175°C. The component is 100% avalanche tested, ensuring robustness in operation.
Packaged in a PG-TDSON-8 surface-mount package, the BSC011N03LS offers Pb-free lead plating and is compliant with RoHS and Halogen-free standards. Its design prioritizes high efficiency and performance in power conversion circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30 V.
The maximum continuous drain current is 240 A at 25°C.
The on-resistance is 1.1 mΩ at VGS = 4.5 V and ID = 50 A.
The MOSFET is rated for operation up to 175°C.
The BSC011N03LS is supplied in a PG-TDSON-8 package.
Yes, the BSC011N03LS is RoHS3 Compliant.
Yes, the BSC011N03LS is Halogen-free.