| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,982 pcs
|
6982 pcs | On Request | 1 | On Request | On Request | 1745+ | On Request | On Request | |
|
3,114 pcs
|
3114 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Mounting Type |
The Infineon IPD053N06N is an N-channel OptiMOSTM power transistor optimized for high-performance switched-mode power supplies (SMPS), particularly for synchronous rectification applications. It offers a drain-source breakdown voltage of 60V and a maximum continuous drain current of 45A at 25°C case temperature.
Key electrical characteristics include a low typical on-state resistance of 4.5 mΩ at VGS=10V and ID=45A, and a maximum of 5.3 mΩ. The gate threshold voltage typically sits at 2.8V. Dynamic characteristics include input capacitance of 2000pF and output capacitance of 490pF.
This MOSFET is 100% avalanche tested and features superior thermal resistance. It is qualified according to JEDEC for target applications and comes with Pb-free lead plating, making it RoHS compliant. The device is also halogen-free according to IEC61249-2-21.
The IPD053N06N is supplied in a PG-TO252-3 package, suitable for surface mounting. Its operating and storage temperature range is from -55°C to 175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 45A.
The drain-source breakdown voltage is 60V.
The typical on-state resistance is 4.5 mΩ.
The package type is PG-TO252-3.
Yes, it is RoHS3 Compliant.
The operating and storage temperature range is -55°C to 175°C.