IPD053N06N The Infineon IPD053N06N is an N-channel OptiMOSTM power MOSFET designed for high-performance SMPS applications. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 45A.
Mfr Part #:

IPD053N06N

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD053N06N is an N-channel OptiMOSTM power MOSFET designed for high-performance SMPS applications. It features a 60V drain-source breakdown voltage and a maximum continuous drain current of 45A.
✓ Total Stock: 12,596 pcs
$ Price Range: $1.67

IPD053N06N Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,982 pcs
6982 pcs On Request 1 On Request On Request 1745+ On Request On Request
Non-Authorised Inventory information
3,114 pcs
3114 pcs On Request 1 On Request On Request 17+ On Request On Request
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2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request

IPD053N06N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Lead Spacing
Mounting Type

IPD053N06N Description

Short technical summary and product information.

The Infineon IPD053N06N is an N-channel OptiMOSTM power transistor optimized for high-performance switched-mode power supplies (SMPS), particularly for synchronous rectification applications. It offers a drain-source breakdown voltage of 60V and a maximum continuous drain current of 45A at 25°C case temperature.

 

Key electrical characteristics include a low typical on-state resistance of 4.5 mΩ at VGS=10V and ID=45A, and a maximum of 5.3 mΩ. The gate threshold voltage typically sits at 2.8V. Dynamic characteristics include input capacitance of 2000pF and output capacitance of 490pF.

 

This MOSFET is 100% avalanche tested and features superior thermal resistance. It is qualified according to JEDEC for target applications and comes with Pb-free lead plating, making it RoHS compliant. The device is also halogen-free according to IEC61249-2-21.

 

The IPD053N06N is supplied in a PG-TO252-3 package, suitable for surface mounting. Its operating and storage temperature range is from -55°C to 175°C.

IPD053N06N Quick Information

Product Type: MOSFET
Series: IPD053N06N
Canonical Name: Infineon IPD053N06N N-channel OptiMOSTM Power-Transistor
Subcategory: N-channel

IPD053N06N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-free lead plating

IPD053N06N Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD053N06N Features

  • N-channel OptiMOSTM power transistor
  • 60V drain-source breakdown voltage
  • 45A maximum continuous drain current
  • Low RDS(on) of 5.3 mΩ maximum
  • Optimized for high performance SMPS

IPD053N06N Applications

  • High performance SMPS applications
  • Synchronous rectification circuits
  • Power supply designs
  • Switching power applications

IPD053N06N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IPD053N06N?

The maximum continuous drain current is 45A.

What is the drain-source breakdown voltage of the IPD053N06N?

The drain-source breakdown voltage is 60V.

What is the typical on-state resistance (RDS(on)) for the IPD053N06N at VGS=10V and ID=45A?

The typical on-state resistance is 4.5 mΩ.

What is the package type for the Infineon IPD053N06N?

The package type is PG-TO252-3.

Is the IPD053N06N RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the operating temperature range for the IPD053N06N?

The operating and storage temperature range is -55°C to 175°C.

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