| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
119 pcs
|
119 pcs | On Request | 1 | On Request | On Request | 1717+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Junction Temperature | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature |
The 2SB1188-R is a PNP Silicon Epitaxial Planar Transistor designed for various electronic applications. It features a low Collector-Emitter Saturation Voltage (VCE(SAT)) and serves as a complement to the 2SD1766.
Key electrical characteristics include a minimum DC Current Gain (hFE) of 82 and a maximum of 390 at VCE = -3V and IC = -0.5A. The Collector-Emitter Breakdown Voltage (VCEO) is -32V, and the Collector Current (IC) is rated up to -2A continuously.
Packaged in a SOT-89 case, this transistor is suitable for surface mounting. The molding compound has a UL 94V-0 flammability rating, and the terminals are tin-plated for good solderability. It operates within a junction temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous collector current is 2A.
The collector-emitter breakdown voltage is 32V minimum.
The component utilizes a SOT-89 surface mount package.
The DC current gain ranges from 82 to 390 when tested at VCE = -3V and IC = -0.5A.
Yes, the component is halogen-free according to datasheet specifications.
The maximum operating junction temperature is 150°C.