| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,540 pcs
|
1540 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
800 pcs
|
800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Lead Spacing | |
| Mounting Type | |
| Power Dissipation | |
| Storage Temperature | |
| Tape & Reel |
The Infineon BSP135 is a high-performance N-channel depletion mode SIPMOS Small-Signal-Transistor designed for various applications. It features a robust 600V drain-source breakdown voltage and a continuous drain current of up to 0.12A at 25°C.
This transistor is qualified according to AEC Q101, ensuring reliability for demanding environments. It comes in a compact PG-SOT223 package suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage ranging from -2.1V to -1V and low on-state resistance values, making it efficient for switching and amplification tasks. The device also boasts dv/dt rating capabilities and is Pb-free and halogen-free.
With its depletion mode operation and specific threshold voltage bands available, the BSP135 offers flexibility in circuit design. Its thermal resistance characteristics are also detailed, providing essential data for thermal management.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 0.12A at 25°C and 0.10A at 70°C.
The drain-source breakdown voltage is a minimum of 600V.
The gate threshold voltage is typically between -2.1V and -1V.
The BSP135 is available in the PG-SOT223 package.
Yes, the BSP135 is qualified according to AEC Q101.
The BSP135 is RoHS3 compliant and Halogen-free.