| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
500 pcs
|
500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation |
The Infineon IPD12CN10N is an N-channel MOSFET belonging to the OptiMOS™2 Power-Transistor family. It features a drain-source breakdown voltage of 100V and a very low on-resistance, with a maximum of 12.4 mΩ at 67A in a TO252 package. This device is designed for high-frequency switching and synchronous rectification applications.
Key electrical characteristics include a gate threshold voltage typically around 3V and a continuous drain current of 67A at 25°C case temperature. The operating temperature range is from -55°C to 175°C, making it suitable for demanding environments. Dynamic characteristics such as input capacitance are up to 4320 pF, and output capacitance is up to 650 pF.
The IPD12CN10N is available in a PG-TO252-3 package, designed for surface mounting. It offers Pb-free lead plating and is halogen-free, complying with environmental standards. The device is qualified according to JEDEC for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.71 | $0.71 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 100V.
The typical gate threshold voltage is 3V.
The maximum drain-source on-state resistance is 12.4 mΩ.
The maximum operating temperature is 175°C.
The IPD12CN10N is supplied in a PG-TO252-3 package.
Yes, this component is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.