IPB60R190C6 The Infineon IPB60R190C6 is a 600V CoolMOS C6 series N-channel power MOSFET. It offers low conduction and switching losses, making it suitable for various power applications.
Mfr Part #:

IPB60R190C6

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPB60R190C6 is a 600V CoolMOS C6 series N-channel power MOSFET. It offers low conduction and switching losses, making it suitable for various power applications.
✓ Total Stock: 2,090 pcs
$ Price Range: $1.88

IPB60R190C6 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,600 pcs
1600 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
390 pcs
390 pcs On Request 1 On Request On Request 13+ On Request On Request
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100 pcs
100 pcs On Request 1 On Request On Request On Request On Request On Request

IPB60R190C6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Gate Charge

IPB60R190C6 Description

Short technical summary and product information.

The Infineon IPB60R190C6 is a high-performance N-channel power MOSFET from the CoolMOS C6 series, designed using Infineon's superjunction technology. This transistor offers significant advantages in power conversion efficiency due to its extremely low on-resistance (RDS(on),max of 0.19 Ω) and low gate charge (Qg,typ of 63 nC).

 

Key electrical parameters include a maximum Drain-Source Voltage (VDS) of 650V and a pulsed drain current (ID,pulse) of 59A. The device exhibits very low switching and conduction losses, contributing to more efficient, compact, and cooler power supply designs. Its high commutation ruggedness ensures reliability in demanding applications.

 

Packaged in a PG-TO263 surface-mount package, the IPB60R190C6 is suitable for applications such as PFC stages, hard switching PWM stages, and resonant switching PWM stages. These include power supplies for PCs, adapters, LCD/PDP TVs, lighting, servers, telecom equipment, and UPS systems.

 

The MOSFET is JEDEC qualified, Pb-free plating, and Halogen-free, aligning with environmental standards.

IPB60R190C6 Quick Information

Product Type: Power MOSFET
Series: C6
Canonical Name: Infineon IPB60R190C6 N-channel Power MOSFET
Subcategory: Power MOSFET

IPB60R190C6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPB60R190C6 Estimated Pricing

Qty Low High
1+ $1.88 $1.88

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPB60R190C6 Features

  • 650V maximum Drain-Source Voltage.
  • 0.19 Ohm maximum On-Resistance.
  • 63nC typical Gate Charge.
  • 59A pulsed Drain Current.
  • PG-TO263 package for surface mounting.

IPB60R190C6 Applications

  • Used in PFC power stages.
  • Suitable for hard switching PWM.
  • Applicable to resonant switching PWM.
  • Ideal for adapters and servers.
  • Designed for telecom and UPS systems.

IPB60R190C6 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPB60R190C6?

The maximum Drain-Source Voltage (VDS) at Tj,max for the IPB60R190C6 is 650V.

What is the typical Gate Charge of the IPB60R190C6 MOSFET?

The typical Gate Charge (Qg) for the IPB60R190C6 is 63 nC.

What is the maximum On-Resistance of the IPB60R190C6?

The maximum On-Resistance (RDS(on),max) for the IPB60R190C6 is 0.19 Ω.

What package type is the IPB60R190C6 supplied in?

The IPB60R190C6 is supplied in the PG-TO263 package.

What is the RoHS status of the IPB60R190C6?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the IPB60R190C6?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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