| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
19,333 pcs
|
19333 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
200 pcs
|
200 pcs | On Request | 1 | On Request | On Request | 13+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type |
The Infineon IPA60R190C6 is a high-voltage N-channel power MOSFET from the CoolMOS C6 series, designed using the superjunction principle. This technology provides the benefits of a fast-switching SJ MOSFET with ease of use, making applications more efficient, compact, and cooler.
Key electrical characteristics include a maximum drain-source voltage (Vds) of 650V, a maximum on-resistance (Rds(on)) of 0.19Ω, and a typical gate charge (Qg) of 63nC. It also features a pulsed drain current (ID,pulse) of 59A and an energy loss (Eoss) of 5.2µJ at 400V.
This MOSFET is suitable for various power management applications such as PFC stages, hard-switching PWM stages, and resonant switching PWM stages. Applications include PC power supplies, adapters, LCD & PDP TVs, lighting, servers, telecom equipment, and UPS systems.
The IPA60R190C6 is available in a PG-TO220 package suitable for through-hole mounting. It is qualified to JEDEC standards and features Pb-free plating and halogen-free materials.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) at Tj,max is 650V.
The maximum on-resistance (Rds(on)) is 0.19Ω.
The typical gate charge (Qg) is 63nC.
The IPA60R190C6 is available in the PG-TO220 package.
The product is listed as RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
Yes, the IPA60R190C6 features Pb-free plating.