| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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44,339 pcs
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44339 pcs | On Request | 1 | On Request | On Request | 1652+ | On Request | On Request |
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The Toshiba TK65S04K3L is an N-channel MOSFET transistor designed for various electronic applications. It features a drain-source voltage rating of 40V and can handle a continuous drain current of up to 65A, with a power dissipation of 88W.
This MOSFET utilizes an enhancement mode channel and is supplied in a DPAK surface-mount package. Key electrical characteristics include a gate-source voltage tolerance of ±20V, an on-state resistance of 4.5mΩ, and a gate charge of 63nC.
The DPAK package is suitable for surface mounting, offering a compact solution for space-constrained designs. Its specifications make it a suitable component for power switching and amplification circuits where robust performance is required.
The drain-source voltage is 40V.
The continuous drain current is 65A.
The power dissipation is 88W.
The on-state resistance is 4.5mΩ.
It is supplied in a DPAK package.
It is designed for SMD mounting.