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IPP60R190C6 The Infineon Technologies IPP60R190C6 is a 650V N-channel Power MOSFET designed for efficient switching applications. It features low conduction and switching losses.
Mfr Part #:

IPP60R190C6

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IPP60R190C6 is a 650V N-channel Power MOSFET designed for efficient switching applications. It features low conduction and switching losses.
✓ Total Stock: 29 pcs
$ Price Range: $2.93

IPP60R190C6 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
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29 pcs
On Request
29 pcs On Request 1 On Request On Request On Request On Request On Request
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IPP60R190C6 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Gate Charge
Halogen Free
Industrial Grade
Military Grade
SVHC Present
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IPP60R190C6 Description

Short technical summary and product information.

The Infineon Technologies IPP60R190C6 is a 650V N-channel Power MOSFET utilizing CoolMOS C6 technology. This technology is based on the superjunction principle, offering significant advantages in high voltage power applications.

 

The device is designed for extremely low losses, characterized by a very low figure of merit (FOM) for Rds(on)*Qg and low Eoss. It boasts a maximum on-resistance of 0.19 Ohms and a typical gate charge of 63 nC. The pulsed drain current is rated at 59A, and the energy loss at 400V is 5.2 µJ. The body diode exhibits a di/dt rating of 500 A/µs, indicating high commutation ruggedness.

 

Applications for the IPP60R190C6 include PFC stages, hard switching PWM stages, and resonant switching PWM stages. It is suitable for use in power supplies for PCs, adapters, LCD & PDP TVs, lighting, servers, telecom equipment, and UPS systems.

 

The IPP60R190C6 is supplied in a PG-TO220 package, designed for through-hole mounting.

IPP60R190C6 Quick Information

Product Type: Power MOSFET
Series: CoolMOS C6
Canonical Name: Infineon Technologies CoolMOS C6 Power MOSFET
Subcategory: N-Channel Power MOSFET

IPP60R190C6 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPP60R190C6 Estimated Pricing

Qty Low High
1+ $2.93 $2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP60R190C6 Features

  • 650V drain-source voltage rating.
  • 0.19 Ohm maximum on-resistance.
  • 63nC typical gate charge.
  • 59A pulsed drain current.
  • TO-220 package for through-hole mounting.

IPP60R190C6 Applications

  • Suitable for PFC stages.
  • Used in hard switching PWM.
  • Applicable to resonant switching PWM.
  • Ideal for PC power supplies.
  • Used in adapter applications.

IPP60R190C6 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPP60R190C6?

650V.

What is the on-resistance of the IPP60R190C6?

0.19 Ohm maximum.

What is the typical gate charge?

63nC.

What is the pulsed drain current rating?

59A.

What package is the IPP60R190C6 available in?

PG-TO220.

What is the output capacitance energy loss at 400V?

5.2 µJ.

What is the body diode di/dt rating?

500A/µs.

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