SI6966EDQ-T1
Vishay
The Vishay Dale SI6966EDQ-T1 is a dual N-channel MOSFET array designed for surface mount applications. It features a 20V drain-source voltage and low on-resistance.
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3,667 pcs
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3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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184 pcs
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184 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
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150 pcs
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150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPB60R180P7 is a 650V N-channel power MOSFET from the CoolMOS P7 generation, built on Infineon's superjunction principle. This technology combines the benefits of a fast-switching SJ MOSFET with excellent ease of use, including low ringing tendency and outstanding body diode robustness.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 180mΩ, and a typical Gate Charge (Qg) of 25nC. It also features a pulsed drain current (ID,pulse) of 53A and an output capacitance energy (Eoss) of 2.9µJ at 400V.
The device is designed for high voltage power MOSFET applications, offering extremely low switching and conduction losses for increased efficiency and cooler operation. It is suitable for hard and soft switching applications such as PFC and LLC stages, and is fully qualified according to JEDEC for industrial applications.
The IPB60R180P7 comes in a PG-TO 263-3 package, designed for surface mounting. Its features, including excellent ESD robustness (>2kV HBM), contribute to increased power density solutions and simplified thermal management.
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Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (Vds) is 650V.
The maximum On-Resistance (Rds(on)) is 180mΩ.
The typical Gate Charge (Qg) is 25nC.
The IPB60R180P7 is supplied in a PG-TO 263-3 package.
It is suitable for PFC stages, hard switching PWM stages, and resonant switching stages, commonly found in PC Silverbox, adapters, TVs, lighting, servers, and telecom equipment.
