| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPD09N03LA is a high-performance N-Channel MOSFET housed in a TO-252 surface mount package. It offers a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 50A at 25°C. The MOSFET exhibits a low on-resistance (Rds(on)) of 9.5mOhm at Vgs=10V and Id=25A, making it suitable for efficient power switching.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V (nominal) and a gate charge (Qg) of 25nC (typical). Input capacitance (Ciss) is typically 450pF, output capacitance (Coss) is 120pF, and reverse transfer capacitance (Crss) is 30pF.
With a power dissipation of 125W at 25°C and an operating temperature range of -55°C to 175°C, this MOSFET is designed for demanding applications. Its surface mount TO-252 package facilitates integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 30V.
The IPD09N03LA is offered in a TO-252 (DPAK) surface mount package.
The junction operating temperature range is -55°C to 175°C.
The gate threshold voltage (Vgs(th)) is typically 2V at Vds=10V, Id=250µA.
Total gate charge (Qg(tot)) is typically 25nC at Vgs=10V, Id=25A.
Maximum power dissipation is 125W at case temperature 25°C.
Thermal resistance junction-to-case (RthJC) is typically 1K/W.