| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,463 pcs
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2463 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI6966EDQ-T1 is a dual N-channel MOSFET array belonging to the Metal Oxide Semiconductor Field Effect Transistor category. It is designed for surface mount applications and comes in an 8-TSSOP package.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 20V and a maximum on-resistance (Rds On) of 30mOhm at 5.2A and 4.5V gate-source voltage. The device features a logic level gate, allowing for efficient switching with lower gate voltages. It has a maximum power dissipation of 1.25W and operates within a temperature range of -55°C to 150°C.
This MOSFET array is suitable for various electronic applications requiring efficient switching and power management. Its surface mount design facilitates integration into compact circuit boards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The maximum on-resistance is 30mOhm at 5.2A and 4.5V.
The operating temperature range is -55°C to 150°C.
It comes in an 8-TSSOP surface mount package.
The minimum gate threshold voltage is 600mV at 250µA.
The maximum gate charge is 25nC at 4.5V.
The maximum power dissipation is 1.25W.