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IPD60R180P7 The Infineon IPD60R180P7 is a 600V N-channel Power MOSFET from the CoolMOS P7 series. It offers low conduction and switching losses in a DPAK package.
Mfr Part #:

IPD60R180P7

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPD60R180P7 is a 600V N-channel Power MOSFET from the CoolMOS P7 series. It offers low conduction and switching losses in a DPAK package.
✓ Total Stock: 1,112 pcs

IPD60R180P7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
112 pcs
On Request
112 pcs On Request 1 On Request On Request 23+ On Request On Request
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IPD60R180P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Gate Charge
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IPD60R180P7 Description

Short technical summary and product information.

The Infineon IPD60R180P7 is a 600V N-channel Power MOSFET belonging to the CoolMOS P7 generation. This device is designed using the superjunction principle, offering a revolutionary technology for high voltage power MOSFETs. It combines the benefits of fast switching with excellent ease of use, including very low ringing tendency and outstanding robustness of the body diode.

 

Key electrical specifications include a maximum Drain-Source Voltage of 650V, a maximum On-Resistance of 180mΩ, and a typical Gate Charge of 25nC. The device also features a pulsed drain current of 53A and low energy loss in output capacitance (Eoss) of 2.9 µJ at 400V. The body diode has a diF/dt rating of 900 A/µs.

 

Designed for applications such as PFC stages, hard switching PWM stages, and resonant switching stages, the IPD60R180P7 is suitable for PC Silverbox, adapters, LCD & PDP TVs, lighting, servers, telecom, and UPS systems. It comes in a DPAK package suitable for surface mounting, simplifying thermal management due to its low switching and conduction losses. The device is fully qualified according to JEDEC for Industrial Applications.

IPD60R180P7 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPD60R180P7 N-channel Power MOSFET
Subcategory: Power MOSFET

IPD60R180P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPD60R180P7 Features

  • 600V CoolMOS P7 N-channel MOSFET.
  • 650V maximum Drain-Source Voltage.
  • 180mΩ maximum On-Resistance.
  • 25nC typical Gate Charge.
  • DPAK surface mount package.

IPD60R180P7 Applications

  • Suitable for PFC and LLC stages.
  • Used in power adapters and TVs.
  • Ideal for server and telecom power supplies.
  • Applicable in UPS systems.

IPD60R180P7 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPD60R180P7?

The maximum drain-source voltage is 650V.

What is the package type of the IPD60R180P7?

It comes in a DPAK surface-mount package.

What is the on-resistance of the IPD60R180P7?

The maximum on-resistance is 180mΩ.

What is the typical gate charge?

The typical gate charge is 25nC.

What is the pulsed drain current rating?

The maximum pulsed drain current is 53A.

What is the output capacitance energy loss at 400V?

The energy loss is 2.9µJ at 400V.

What is the body diode di/dt rating?

The body diode di/dt rating is 900A/µs.

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