2N7002LT1G
On Semiconductor
N-Channel MOSFET with 60V drain-source voltage and 115mA continuous drain current in a SOT-23-3 surface mount package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Tape & Reel |
The IPB0401NM5SATMA1 is a single N-channel Trench MOSFET manufactured by Infineon Technologies. It features a drain-source voltage rating of at least 100V. The device is designed for efficient power switching applications. It is compliant with RoHS3, REACH, and has an MSL rating of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 1,000+ | $1.55 | $1.55 |
| 2,000+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Yes, the part is indicated as RoHS3 compliant according to the available data (unverified).
Based on the product description, the drain-source voltage is >=100V.
MSL 1 (Unlimited).