| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N7002LT1G is an N-Channel enhancement mode MOSFET designed for small signal switching applications. Manufactured by On Semiconductor (onsemi), this device features a maximum drain-source voltage of 60V and continuous drain current of 115mA at 25°C case temperature.
Key electrical characteristics include a typical on-resistance of 7.5 Ohms maximum at Vgs = 10V and Id = 500mA, and a gate threshold voltage of 2.5V maximum at Id = 250µA. The device is rated for pulsed drain current up to 800mA and offers a maximum power dissipation of 225mW on FR-5 board or 300mW on alumina substrate.
The 2N7002LT1G is supplied in a SOT-23-3 surface mount package (case 318, style 21) with Pb-Free, Halogen Free/BFR Free and RoHS compliance. The operating junction temperature range is -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.35 | $0.35 |
| 10+ | $0.20 | $0.20 |
| 100+ | $0.12 | $0.12 |
| 500+ | $0.09 | $0.09 |
| 1,000+ | $0.08 | $0.08 |
| 3,000+ | $0.07 | $0.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The 2N7002LT1G has a maximum drain-source voltage (Vdss) of 60V.
The continuous drain current is 115mA at TC = 25°C.
The operating junction temperature range is -55°C to +150°C.
The device is available in a SOT-23-3 (TO-236) surface mount package.
Yes, the device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.