2N7002LT1G N-Channel MOSFET with 60V drain-source voltage and 115mA continuous drain current in a SOT-23-3 surface mount package.
Mfr Part #:

2N7002LT1G

Available from 17 distributors
Mfr Name: On Semiconductor
On Semiconductor
N-Channel MOSFET with 60V drain-source voltage and 115mA continuous drain current in a SOT-23-3 surface mount package.
✓ Total Stock: 11,856,992 pcs
$ Price Range: $0.07 - $0.35

2N7002LT1G Available from 17 distributors

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2N7002LT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

2N7002LT1G Description

Short technical summary and product information.

The 2N7002LT1G is an N-Channel enhancement mode MOSFET designed for small signal switching applications. Manufactured by On Semiconductor (onsemi), this device features a maximum drain-source voltage of 60V and continuous drain current of 115mA at 25°C case temperature.

 

Key electrical characteristics include a typical on-resistance of 7.5 Ohms maximum at Vgs = 10V and Id = 500mA, and a gate threshold voltage of 2.5V maximum at Id = 250µA. The device is rated for pulsed drain current up to 800mA and offers a maximum power dissipation of 225mW on FR-5 board or 300mW on alumina substrate.

 

The 2N7002LT1G is supplied in a SOT-23-3 surface mount package (case 318, style 21) with Pb-Free, Halogen Free/BFR Free and RoHS compliance. The operating junction temperature range is -55°C to +150°C.

2N7002LT1G Quick Information

Product Type: N-Channel MOSFET
Canonical Name: 2N7002LT1G N-Channel MOSFET, 60V, 115mA, SOT-23-3
Subcategory: Single N-Channel

2N7002LT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2N7002LT1G Estimated Pricing

Qty Low High
1+ $0.35 $0.35
10+ $0.20 $0.20
100+ $0.12 $0.12
500+ $0.09 $0.09
1,000+ $0.08 $0.08
3,000+ $0.07 $0.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002LT1G Features

  • N-channel small signal MOSFET design.
  • 60V maximum drain-source voltage rating.
  • 115mA continuous drain current capability.
  • Low on-resistance of 7.5 Ohms typical.
  • RoHS, Pb-Free, and Halogen Free compliant.

2N7002LT1G Applications

  • Used in low power DC-DC converters.
  • Ideal for load and power management.
  • Suitable for battery protection circuits.
  • Used in small signal analog switches.
  • For gate drive and relay driver circuits.

2N7002LT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the 2N7002LT1G?

The 2N7002LT1G has a maximum drain-source voltage (Vdss) of 60V.

What is the continuous drain current rating of the 2N7002LT1G?

The continuous drain current is 115mA at TC = 25°C.

What is the operating temperature range?

The operating junction temperature range is -55°C to +150°C.

What is the package type of the 2N7002LT1G?

The device is available in a SOT-23-3 (TO-236) surface mount package.

Is the 2N7002LT1G RoHS compliant?

Yes, the device is RoHS3 compliant, Pb-Free, and Halogen Free/BFR Free.

2N7002LT1G Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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On Semiconductor
N-Channel small signal MOSFET with 60V drain-source breakdown voltage and 115mA continuous drain current. Offered in a surface-mount SOT-23-3 package.
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