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2N7002KT3G

The 2N7002KT3G is a single N-Channel MOSFET from On Semiconductor. It features a 60V drain-source voltage rating and a continuous drain current of 320mA (minimum pad) or 380mA (1 sq in pad).

✓ Total Stock: 7,811,040 pcs

2N7002KT3G Available from 2 distributors

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Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Flip Electronics ✓ Non-Authorised Inventory information	7,788,000 pcs On Request	7788000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Fe Components ✓ Non-Authorised Inventory information	23,040 pcs On Request	23040 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

2N7002KT3G Description

Short technical summary and product information.

The 2N7002KT3G is a single N-Channel MOSFET manufactured by On Semiconductor. It is designed for low-power switching and signal-level applications. The device is rated for a drain-to-source voltage of 60V and a gate-to-source voltage of ±20V. Continuous drain current is 320mA with a minimum pad and 380mA with a 1 sq in pad at 25°C, with a pulsed drain current rating of 5.0A.

The MOSFET features a maximum on-resistance of 1.6Ω at VGS=10V and 2.5Ω at VGS=4.5V, with a gate threshold voltage of 2.3V maximum. It has a low gate charge of 0.7nC and input capacitance of 24.5pF, making it suitable for high-speed switching in portable and battery-powered applications. The device is ESD protected up to 2000V (HBM).

The 2N7002KT3G is offered in a surface-mount SOT-23-3 (TO-236) package, suitable for compact PCB designs. It is Pb-Free, Halogen Free/BFR Free, and RoHS compliant. The operating junction temperature range is -55°C to +150°C.

2N7002KT3G Quick Information

Product Type: Single N-Channel MOSFET

Canonical Name: N-Channel MOSFET, 60V, 320mA, SOT-23-3

Subcategory: Single N-Channel MOSFET

2N7002KT3G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 (Unlimited)

REACH Status: REACH Unaffected

Lead Free: Yes

2N7002KT3G Features

60V drain-source voltage rating.
320mA continuous drain current.
Low on-resistance of 1.6Ω.
ESD protected up to 2000V.
RoHS compliant and Pb-Free.

2N7002KT3G Applications

Ideal for low-side load switches.
Used in level shift circuits.
Suitable for DC-DC converter designs.
Perfect for portable battery-powered devices.

2N7002KT3G FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the 2N7002KT3G?

The maximum drain-to-source voltage is 60V.

What is the maximum continuous drain current of the 2N7002KT3G?

The maximum continuous drain current is 320mA with a minimum pad and 380mA with a 1 sq in pad at 25°C.

What is the package type of the 2N7002KT3G?

The 2N7002KT3G is available in a SOT-23-3 (TO-236) surface-mount package.

What is the operating junction temperature range of the 2N7002KT3G?

The operating junction temperature range is -55°C to +150°C.

Is the 2N7002KT3G RoHS compliant?

Yes, the 2N7002KT3G is RoHS compliant, Pb-Free, and Halogen Free/BFR Free.

What is the maximum on-resistance of the 2N7002KT3G?

The maximum on-resistance is 1.6Ω at VGS=10V and 2.5Ω at VGS=4.5V.

What is the ESD rating of the 2N7002KT3G?

The ESD rating is 2000V (HBM, Method 3015).

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Automotive Grade	No
Current	320 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.7 nC
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	24.5 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C
Power Dissipation (Max)	350 mW
Rds On (Max) @ Id, Vgs	1.6 Ω
Storage Temperature	-55.0°C ~ 150.0°C
Supplier Device Package	SOT-23-3 (TO-236)
Tape & Reel	Yes
Technology	MOSFET (Metal Oxide)
Termination Style	SMD (Gull Wing)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	2.3 V