2N7002KT1G 2N7002KT1G is a 60V, 380mA N-channel MOSFET from On Semiconductor in a SOT-23-3 package. It features low Rds(on) of 1.6 Ohm and ESD protection.
Mfr Part #:

2N7002KT1G

Available from 10 distributors
Mfr Name: On Semiconductor
On Semiconductor
2N7002KT1G is a 60V, 380mA N-channel MOSFET from On Semiconductor in a SOT-23-3 package. It features low Rds(on) of 1.6 Ohm and ESD protection.
✓ Total Stock: 8,032,966 pcs
$ Price Range: $0.20

2N7002KT1G Available from 10 distributors

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150,000 pcs
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60,000 pcs
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20,909 pcs
20909 pcs On Request 1 On Request On Request 2018+ On Request On Request
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8,500 pcs
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3,047 pcs
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198 pcs
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50 pcs
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1 On Request On Request On Request On Request On Request

2N7002KT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Termination Style
Vgs (Max)
Vgs(th) (Max) @ Id

2N7002KT1G Description

Short technical summary and product information.

The 2N7002KT1G is a single N-channel small signal MOSFET from On Semiconductor, designed for low-voltage switching applications. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 380mA (steady state, 1 sq in pad at 25°C). The device offers low on-resistance of 1.6 Ohm (max) at Vgs=10V, ensuring efficient power handling.

 

With a gate threshold voltage of 2.3V (max) at ID=250µA, the MOSFET is easily driven by logic-level signals. Input capacitance is only 24.5pF and gate charge is 0.7nC, enabling fast switching with minimal drive losses. The device is ESD rated at 2000V (HBM) for gate protection.

 

Thermally, the device can dissipate up to 420mW on a 1 sq in copper pad, with a junction-to-ambient thermal resistance of 300°C/W. Operating junction temperature range is -55°C to 150°C. The component is housed in a surface-mount SOT-23-3 package (TO-236), suitable for compact PCB designs.

 

Per the datasheet, the 2N7002KT1G is Pb-Free and Halogen Free/BFR Free, and is RoHS compliant. Typical applications include low-side load switches, level shift circuits, DC-DC converters, and portable electronics such as DSC, PDA, and cell phones.

2N7002KT1G Quick Information

Product Type: N-Channel MOSFET
Series: 2N7002K
Canonical Name: 2N7002KT1G N-Channel MOSFET
Subcategory: Single N-Channel MOSFET

2N7002KT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

2N7002KT1G Estimated Pricing

Qty Low High
1+ $0.28 $0.28
10+ $0.16 $0.16
100+ $0.10 $0.10
500+ $0.07 $0.07
1,000+ $0.06 $0.06
3,000+ $0.06 $0.06

Estimated market price range - modelled values for guidance only, not live distributor offers.

2N7002KT1G Features

  • N-channel MOSFET with 60V drain-source rating.
  • Maximum drain current of 380 mA steady state.
  • Low Rds(on) of 1.6 Ohm at 10V gate drive.
  • ESD rated 2000 V (HBM) gate-source protection.
  • Surface mount SOT-23-3 package.

2N7002KT1G Applications

  • Low side load switch in portable electronics.
  • Level shift circuits for signal interfacing.
  • DC-DC converter power management.
  • Portable applications like DSC, PDA, cell phone.

2N7002KT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage?

60 V.

What is the package type?

SOT-23-3 (TO-236).

What is the operating temperature range?

-55°C to 150°C (junction).

What is the maximum drain current at 25°C?

380 mA (steady state, 1 sq in pad).

Is the device ESD protected?

Yes, gate-source ESD rating of 2000 V (HBM).

What is the typical on-resistance?

1.6 Ohm maximum at Vgs=10V and Id=500mA.

Is the device RoHS compliant?

Yes, per the datasheet the device is RoHS compliant.

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