| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
7,788,000 pcs
|
7788000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
150,000 pcs
|
150000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
60,000 pcs
|
60000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
20,909 pcs
|
20909 pcs | On Request | 1 | On Request | On Request | 2018+ | On Request | On Request | |||||||||
|
8,500 pcs
|
8500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
3,047 pcs
|
3047 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |||||||||
|
1,662 pcs
|
1662 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
600 pcs
|
600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |||||||||
|
198 pcs
|
198 pcs | On Request | 1 | On Request | On Request | 1945/11+/1952 | On Request | On Request | |||||||||
|
50 pcs
$0.20
|
50 pcs |
$0.20
|
1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The 2N7002KT1G is a single N-channel small signal MOSFET from On Semiconductor, designed for low-voltage switching applications. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 380mA (steady state, 1 sq in pad at 25°C). The device offers low on-resistance of 1.6 Ohm (max) at Vgs=10V, ensuring efficient power handling.
With a gate threshold voltage of 2.3V (max) at ID=250µA, the MOSFET is easily driven by logic-level signals. Input capacitance is only 24.5pF and gate charge is 0.7nC, enabling fast switching with minimal drive losses. The device is ESD rated at 2000V (HBM) for gate protection.
Thermally, the device can dissipate up to 420mW on a 1 sq in copper pad, with a junction-to-ambient thermal resistance of 300°C/W. Operating junction temperature range is -55°C to 150°C. The component is housed in a surface-mount SOT-23-3 package (TO-236), suitable for compact PCB designs.
Per the datasheet, the 2N7002KT1G is Pb-Free and Halogen Free/BFR Free, and is RoHS compliant. Typical applications include low-side load switches, level shift circuits, DC-DC converters, and portable electronics such as DSC, PDA, and cell phones.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.28 | $0.28 |
| 10+ | $0.16 | $0.16 |
| 100+ | $0.10 | $0.10 |
| 500+ | $0.07 | $0.07 |
| 1,000+ | $0.06 | $0.06 |
| 3,000+ | $0.06 | $0.06 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
SOT-23-3 (TO-236).
-55°C to 150°C (junction).
380 mA (steady state, 1 sq in pad).
Yes, gate-source ESD rating of 2000 V (HBM).
1.6 Ohm maximum at Vgs=10V and Id=500mA.
Yes, per the datasheet the device is RoHS compliant.