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IPA60R360P7S The Infineon IPA60R360P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It offers high efficiency with low switching and conduction losses.
Mfr Part #:

IPA60R360P7S

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPA60R360P7S is a 600V CoolMOS P7 series N-channel power MOSFET. It offers high efficiency with low switching and conduction losses.
✓ Total Stock: 25,309 pcs
$ Price Range: $3.49

IPA60R360P7S Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
23,090 pcs
On Request
23090 pcs On Request 1 On Request On Request 1818+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,357 pcs
On Request
1357 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
862 pcs
On Request
862 pcs On Request 1 On Request On Request 21+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPA60R360P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Gate Charge
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IPA60R360P7S Description

Short technical summary and product information.

The Infineon IPA60R360P7S is a 600V CoolMOS P7 series N-channel power MOSFET. This device is designed using Infineon's superjunction (SJ) principle, offering a revolutionary technology for high voltage power MOSFETs.

 

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 360mΩ, and a typical Gate Charge (Qg) of 13nC. It also features a pulsed drain current (ID,pulse) of 26A and an energy loss (Eoss) of 1.6 µJ at 400V.

 

The IPA60R360P7S is suitable for hard and soft switching applications such as PFC and LLC stages, offering excellent ESD robustness greater than 2kV (HBM). Its design prioritizes ease of use, low ringing tendency, and outstanding body diode ruggedness against hard commutation.

 

Packaged in a PG-TO 220 FullPAK, this MOSFET is designed for increased power density solutions and simplified thermal management due to its low switching and conduction losses. It is qualified according to JEDEC Standard.

IPA60R360P7S Quick Information

Product Type: Power MOSFET
Series: P7
Canonical Name: Infineon CoolMOS P7 Power MOSFET
Subcategory: N-channel Power MOSFET

IPA60R360P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPA60R360P7S Estimated Pricing

Qty Low High
1+ $3.49 $3.49

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPA60R360P7S Features

  • 650V Drain-Source Voltage rating.
  • 360mΩ maximum On-Resistance.
  • Excellent ESD robustness >2kV.
  • PG-TO 220 FullPAK package.
  • Low switching and conduction losses.

IPA60R360P7S Applications

  • Suitable for PFC stages.
  • Used in hard switching PWM stages.
  • Applicable for resonant switching stages.
  • Ideal for PC Silverbox designs.
  • Used in adapter and telecom applications.

IPA60R360P7S FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the IPA60R360P7S?

The maximum drain-source voltage (Vds) is 650V.

What is the on-resistance (Rds(on)) of the IPA60R360P7S?

The maximum Rds(on) is 360mΩ.

What package does the IPA60R360P7S come in?

It is packaged in a PG-TO 220 FullPAK case.

What is the gate charge (Qg) of the device?

The typical gate charge (Qg) is 13nC.

What is the energy loss at 400V for the IPA60R360P7S?

The energy loss is 1.6µJ at 400V.

What is the body diode di/dt rating?

The body diode di/dt is 900A/µs.

What is the ESD robustness of the device?

It has an ESD robustness of over 2kV (HBM).

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